Diamond turning of small Fresnel lens array in single crystal InSb
Identifieur interne : 000F38 ( Main/Repository ); précédent : 000F37; suivant : 000F39Diamond turning of small Fresnel lens array in single crystal InSb
Auteurs : RBID : Pascal:13-0195816Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
A small Fresnel lens array was diamond turned in a single crystal (001) InSb wafer using a half-radius negative rake angle (-25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a 'mechanical lithography' process in single crystal semiconductors.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000D05
Links to Exploration step
Pascal:13-0195816Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Diamond turning of small Fresnel lens array in single crystal InSb</title><author><name sortKey="Jasinevicius, R G" uniqKey="Jasinevicius R">R. G. Jasinevicius</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Engenharia Mecânica, EESC, USP, CP 359</s1><s2>13566-590 São Carlos, SP</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>13566-590 São Carlos, SP</wicri:noRegion></affiliation></author><author><name sortKey="Duduch, J G" uniqKey="Duduch J">J. G. Duduch</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Departamento de Engenharia Mecânica, EESC, USP, CP 359</s1><s2>13566-590 São Carlos, SP</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>13566-590 São Carlos, SP</wicri:noRegion></affiliation></author><author><name sortKey="Cirino, G A" uniqKey="Cirino G">G. A. Cirino</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Departamento de Engenharia Elétrica, Universidade Federal de São Carlos</s1><s2>13565-905 São Carlos, SP</s2><s3>BRA</s3><sZ>3 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>13565-905 São Carlos, SP</wicri:noRegion></affiliation></author><author><name sortKey="Pizani, P S" uniqKey="Pizani P">P. S. Pizani</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Departamento de Física, Universidade Federal de São Carlos, CP 676</s1><s2>13 565-905 São Carlos, SP</s2><s3>BRA</s3><sZ>4 aut.</sZ></inist:fA14><country>Brésil</country><wicri:noRegion>13 565-905 São Carlos, SP</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0195816</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0195816 INIST</idno><idno type="RBID">Pascal:13-0195816</idno><idno type="wicri:Area/Main/Corpus">000D05</idno><idno type="wicri:Area/Main/Repository">000F38</idno></publicationStmt><seriesStmt><idno type="ISSN">0960-1317</idno><title level="j" type="abbreviated">J. micromech. microeng. : (Print)</title><title level="j" type="main">Journal of micromechanics and microengineering : (Print)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Annealing</term><term>Chip formation</term><term>Diamond tool</term><term>Fresnel lens</term><term>Indium antimonides</term><term>Machining</term><term>Microstructure</term><term>Profilometry</term><term>Raman spectrum</term><term>Roughness</term><term>Scanning electron microscopy</term><term>Semiconductor materials</term><term>Single crystal</term><term>Turning</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Tournage</term><term>Usinage</term><term>Microscopie électronique balayage</term><term>Profilométrie</term><term>Rugosité</term><term>Microstructure</term><term>Spectre Raman</term><term>Formation copeau</term><term>Outil diamant</term><term>Recuit</term><term>Lentille Fresnel</term><term>Monocristal</term><term>Antimoniure d'indium</term><term>Semiconducteur</term><term>InSb</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A small Fresnel lens array was diamond turned in a single crystal (001) InSb wafer using a half-radius negative rake angle (-25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a 'mechanical lithography' process in single crystal semiconductors.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0960-1317</s0></fA01><fA03 i2="1"><s0>J. micromech. microeng. : (Print)</s0></fA03><fA05><s2>23</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Diamond turning of small Fresnel lens array in single crystal InSb</s1></fA08><fA11 i1="01" i2="1"><s1>JASINEVICIUS (R. G.)</s1></fA11><fA11 i1="02" i2="1"><s1>DUDUCH (J. G.)</s1></fA11><fA11 i1="03" i2="1"><s1>CIRINO (G. A.)</s1></fA11><fA11 i1="04" i2="1"><s1>PIZANI (P. S.)</s1></fA11><fA14 i1="01"><s1>Departamento de Engenharia Mecânica, EESC, USP, CP 359</s1><s2>13566-590 São Carlos, SP</s2><s3>BRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Departamento de Engenharia Elétrica, Universidade Federal de São Carlos</s1><s2>13565-905 São Carlos, SP</s2><s3>BRA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>Departamento de Física, Universidade Federal de São Carlos, CP 676</s1><s2>13 565-905 São Carlos, SP</s2><s3>BRA</s3><sZ>4 aut.</sZ></fA14><fA20><s2>055025.1-055025.12</s2></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>22483</s2><s5>354000503786610250</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>39 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0195816</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of micromechanics and microengineering : (Print)</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>A small Fresnel lens array was diamond turned in a single crystal (001) InSb wafer using a half-radius negative rake angle (-25°) single-point diamond tool. The machined array consisted of three concave Fresnel lenses cut under different machining sequences. The Fresnel lens profiles were designed to operate in the paraxial domain having a quadratic phase distribution. The sample was examined by scanning electron microscopy and an optical profilometer. Optical profilometry was also used to measure the surface roughness of the machined surface. Ductile ribbon-like chips were observed on the cutting tool rake face. No signs of cutting edge wear was observed on the diamond tool. The machined surface presented an amorphous phase probed by micro Raman spectroscopy. A successful heat treatment of annealing was carried out to recover the crystalline phase on the machined surface. The results indicated that it is possible to perform a 'mechanical lithography' process in single crystal semiconductors.</s0></fC01><fC02 i1="01" i2="X"><s0>001D12I</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Tournage</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Turning</s0><s5>02</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Torneado</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Usinage</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Machining</s0><s5>03</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Mecanizado</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Microscopie électronique balayage</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Scanning electron microscopy</s0><s5>04</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Microscopía electrónica barrido</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Profilométrie</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Profilometry</s0><s5>05</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Perfilometría</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Rugosité</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Roughness</s0><s5>06</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Rugosidad</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Microstructure</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Microstructure</s0><s5>07</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Microestructura</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Spectre Raman</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Raman spectrum</s0><s5>08</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Espectro Raman</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Formation copeau</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Chip formation</s0><s5>09</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Formación viruta</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Outil diamant</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Diamond tool</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Diamante</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Recuit</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Annealing</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Recocido</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Lentille Fresnel</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Fresnel lens</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Lente Fresnel</s0><s5>13</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Monocristal</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Single crystal</s0><s5>17</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Monocristal</s0><s5>17</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Antimoniure d'indium</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Semiconducteur</s0><s5>20</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Semiconductor materials</s0><s5>20</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Semiconductor(material)</s0><s5>20</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>InSb</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>182</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000F38 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000F38 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0195816
|texte= Diamond turning of small Fresnel lens array in single crystal InSb
}}
| This area was generated with Dilib version V0.5.77. |  |